dopant activation

dopant activation
legiravimo priemaišos aktyvinimas statusas T sritis radioelektronika atitikmenys: angl. dopant activation vok. Dotantenaktivierung, f rus. активирование легирующей примеси, n pranc. activation de dopant, f

Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. . 2000.

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  • Dopant Activation — is the process of obtaining the desired electronic contribution from impurity species in a semiconductor host.[1] The term is often restricted to the application of thermal energy following the ion implantation of dopants. In the most common… …   Wikipedia

  • activation de dopant — legiravimo priemaišos aktyvinimas statusas T sritis radioelektronika atitikmenys: angl. dopant activation vok. Dotantenaktivierung, f rus. активирование легирующей примеси, n pranc. activation de dopant, f …   Radioelektronikos terminų žodynas

  • activation de dopant par recuit — atkaitinamasis priemaišos aktyvinimas statusas T sritis radioelektronika atitikmenys: angl. annealing impurity activation vok. Aktivierung von Dotanten durch beim Ausheilen erfolgende Energiezufuhr, f rus. активация примеси отжигом, f pranc.… …   Radioelektronikos terminų žodynas

  • annealing impurity activation — atkaitinamasis priemaišos aktyvinimas statusas T sritis radioelektronika atitikmenys: angl. annealing impurity activation vok. Aktivierung von Dotanten durch beim Ausheilen erfolgende Energiezufuhr, f rus. активация примеси отжигом, f pranc.… …   Radioelektronikos terminų žodynas

  • Monolayer doping — (MLD) is a well controlled, wafer scale surface doping technique first developed at the University of California, Berkeley, in 2007.[1] This work is aimed for attaining controlled doping of semiconductor materials with atomic accuracy, especially …   Wikipedia

  • Semiconductor process simulation — is the modeling of the fabrication of semiconductor devices such as transistors. It is a branch of electronic design automation, and part of a sub field known as technology CAD, or TCAD. 400px|right|thumb|This figure shows a result from… …   Wikipedia

  • Dotantenaktivierung — legiravimo priemaišos aktyvinimas statusas T sritis radioelektronika atitikmenys: angl. dopant activation vok. Dotantenaktivierung, f rus. активирование легирующей примеси, n pranc. activation de dopant, f …   Radioelektronikos terminų žodynas

  • legiravimo priemaišos aktyvinimas — statusas T sritis radioelektronika atitikmenys: angl. dopant activation vok. Dotantenaktivierung, f rus. активирование легирующей примеси, n pranc. activation de dopant, f …   Radioelektronikos terminų žodynas

  • активирование легирующей примеси — legiravimo priemaišos aktyvinimas statusas T sritis radioelektronika atitikmenys: angl. dopant activation vok. Dotantenaktivierung, f rus. активирование легирующей примеси, n pranc. activation de dopant, f …   Radioelektronikos terminų žodynas

  • Rapid thermal processing — (or RTP) refers to a semiconductor manufacturing process which heats silicon wafers to high temperatures (up to 1200 C or greater) on a timescale of several seconds or less. The wafers must be brought down (temperature) slow enough however, so… …   Wikipedia

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